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间接带隙半导体
释义
间接带隙半导体
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indirect band gap semiconductor
间接带隙半导体
导带底和价带顶处在晶体动量空间的不同位置的半导体材料称为间接带隙半导体材料。
Physics
>凝聚态物理学>半导体物理>释义
indirect band gap semiconductor
间接带隙半导体
>能源物理>释义
indirect bandgap semiconductors
间接带隙半导体
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group with a semigroup of operators
group with center
group with multiple operators
group with operators
group without center
group without radical
group without torsion
group with respect to addition
group with respect to a form
group with respect to multiplication
group with the maximum condition
group with the minimum condition
group with unique extraction of root
group word
group Ⅱ-Ⅵ semiconductor
group Ⅲ-Ⅴ semiconductor
Group ⅧB element
Group Ⅷ element
grout-enriched vibrated
grouting
grouting control technology of tunnel and underground engineering
grouting deep mixing reinforcement machine
grouting in tunnel and underground engineering
grouting machinery
grouting machinery for tunnel and underground engineering
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