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Ⅳ族高迁移率沟道MOS器件
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Ⅳ族高迁移率沟道MOS器件
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高迁移率沟道MOS器件
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high mobility Ⅳ channel metal-oxide-semiconductor field effect transistor
Ⅳ族高迁移率沟道MOS器件
采用Ⅳ族高迁移率半导体材料作为沟道区域的金属-氧化物-半导体场效应晶体管(metal-oxide-semiconductor field effect transistor; MOSFET)器件。
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