“silicon carbide epitaxy”的概念、定义、翻译、参考文献-科学参考

单词	silicon carbide epitaxy
释义	silicon carbide epitaxy Encyclopedia 工学半导体外延生长释 silicon carbide epitaxy碳化硅外延在碳化硅单晶衬底（基片）上生长有一定要求（厚度和掺杂浓度）、具有特定晶面的碳化硅单晶层的技术。
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科学参考收录了854744条科技类词条，基本涵盖了常见科技类参考文献及英语词汇的翻译，是科学学习和研究的有利工具。