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donor point defect
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donor point defect
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理学
施主点缺陷
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donor point defect
施主点缺陷
在掺杂过程中,价电子多的杂质原子取代晶格内价电子少的组成原子,为了保持电中性,多出的电子被释放到价带和导带之间的位置从而降低禁带宽度;如果材料为离子化合物,掺杂原子引入的过多电子可给予本体结构中的原子,也有可能造成本体结构中的原子空位的现象。属于给予电子型的离子取代缺陷。
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